| 引用本文: | 石于中,王毛彦,尹乐,等.泰氟隆烧蚀产物对电子密度的影响.[J].国防科技大学学报,2004,26(6):30-33.[点击复制] |
| SHI Yuzhong,WANG Maoyan,YIN Le,et al.The Effect of Wall Injection of Teflon Ablating Material on Electron Number Density[J].Journal of National University of Defense Technology,2004,26(6):30-33[点击复制] |
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| 泰氟隆烧蚀产物对电子密度的影响 |
| 石于中, 王毛彦, 尹乐, 陈伟芳 |
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(国防科技大学 航天与材料工程学院，湖南 长沙 410073)
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| 摘要: |
| 采用WNND格式，对有泰氟隆烧蚀产物引射的化学非平衡NS方程进行了数值模拟。采用7组元纯空气化学反应和19组元、28种反应的空气—泰氟隆化学反应系统，对照计算了壁面有泰氟隆烧蚀产物引射和纯空气绕流两种流场，研究了泰氟隆烧蚀产物对电子密度的影响。 |
| 关键词: 烧蚀 化学非平衡 数值计算 |
| DOI： |
| 投稿日期：2004-03-28 |
| 基金项目: |
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| The Effect of Wall Injection of Teflon Ablating Material on Electron Number Density |
| SHI Yuzhong, WANG Maoyan, YIN Le, CHEN Weifang |
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(College of Aerospace and Materials Engineering, National Univ. of Defense Technology, Changsha 410073, China)
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| Abstract: |
| The chemical non-equilibrium flows over a teflon ablative wall are calculated numerically by solving NS equations with pure-air and teflon-air chemical reaction system. The overall teflon-air chemical system used consists of 19 species and 28 reactions. The effect of wall injection of teflon ablating material on electron number density are discussed. |
| Keywords: ablation chemical non-equilibrium numerical simulation |
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