| 引用本文: | 郑春满,宋植彦,魏海博,等.具有C轴取向Al3+掺杂型ZnO薄膜的溶胶-凝胶法制备及其性能研究.[J].国防科技大学学报,2012,34(3):33-37.[点击复制] |
| ZHENG Chunman,SONG Zhiyan,WEI Haibo,et al.The study on the preparation of AlThe study on the preparation of Al3+ doped ZnO thin films with ［002］ oriented by sol-gel method and its propertiesdoped ZnO thin films with ［002］ oriented by sol gel method and its properties[J].Journal of National University of Defense Technology,2012,34(3):33-37[点击复制] |
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| 具有C轴取向Al3+掺杂型ZnO薄膜的溶胶-凝胶法制备及其性能研究 |
| 郑春满, 宋植彦, 魏海博, 帖楠, 谢凯 |
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(国防科技大学 航天与材料工程学院, 湖南 长沙 410073)
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| 摘要: |
| 以乙二醇甲醚为溶剂，采用Sol-Gel法制备出具有C轴取向、可导电的Al3+,离子掺杂ZnO透明薄膜，并利用场发射扫描电镜、X-射线衍射、能谱分析、标准四探针和反射光谱仪等对薄膜的组成、结构和光学性能进行了分析。结果表明：Al3+离子掺杂ZnO薄膜为六方纤锌矿型结构，由六棱柱状阵列构成，具有C轴择优取向；薄膜电阻率随Al3+离子掺杂浓度的升高而降低；在可见光区域，薄膜透光率随Al3+离子掺杂浓度的升高而降低，掺杂3% ZnO薄膜的透光率达到90%左右，禁带宽度为3.25 eV，具备制作薄膜太阳能电池透明导电电极材料的应用价值。 |
| 关键词: 溶胶-凝胶 ZnO薄膜 Al3+离子掺杂 制备 |
| DOI： |
| 投稿日期：2011-06-22 |
| 基金项目:湖南省自然科学基金资助项目(10JJ4045)；国防科技大学校预研资助项目(JC08-01-06) |
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| The study on the preparation of AlThe study on the preparation of Al3+ doped ZnO thin films with ［002］ oriented by sol-gel method and its propertiesdoped ZnO thin films with ［002］ oriented by sol gel method and its properties |
| ZHENG Chunman, SONG Zhiyan, WEI Haibo, TIE Nan, XIE Kai |
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(College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073, China)
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| Abstract: |
| The aluminum-doped ZnO thin films with ［002］ oriented were prepared using 2-methoxyethan as a solvent system by the sol-gel method. The composition, structure and optical properties were studied by means of Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), Energy-dispersive X-ray microanalysis (EDX) and Spectral shape. The results showed that the ZnO films are hexagonal wurtzite structure, which consists of hexagonal rods growing along C axis. The resistivity of the aluminum-doped ZnO thin films decreases with the increase of the content of Al3+.In the visible region, the light transmittance of the ZnO thin films with 3% aluminum is about 90%, and the band gap is about 3.25 eV, which can meet the material requirements for photoelectric devices such as photovoltaic solar cell. |
| Keywords: Sol-Gel ZnO thin film Aluminum-doped preparation |
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