The aluminum-doped ZnO thin films with ［002］ oriented were prepared using 2-methoxyethan as a solvent system by the sol-gel method. The composition, structure and optical properties were studied by means of Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), Energy-dispersive X-ray microanalysis (EDX) and Spectral shape. The results showed that the ZnO films are hexagonal wurtzite structure, which consists of hexagonal rods growing along C axis. The resistivity of the aluminum-doped ZnO thin films decreases with the increase of the content of Al³⁺.In the visible region, the light transmittance of the ZnO thin films with 3% aluminum is about 90%, and the band gap is about 3.25 eV, which can meet the material requirements for photoelectric devices such as photovoltaic solar cell.