Based on the LDO regulator DC offset failure mechanism under electromagnetic interference (EMI) study, the immunity modeling and simulation methods are proposed. A test chip was designed with novel on-chip voltage sensor which is implemented to test the EMI propagation inner LDO regulator. In the immunity modeling process, an equivalent circuit model dedicated to susceptibility prediction was built and validated by DC functional and Z parameter impedance measurements. In the simulation flow, the key sub-circuits and parasitic elements were analyzed to reveal the weight contributions on immunity issues in frequency domain. The DPI measurement results show a good fit with prediction from the model up to 1 GHz.
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吴建飞 ,李建成 ,王宏义 ,等. LDO稳压器敏感度建模与仿真技术[J].国防科技大学学报,2013,35(5):168-173. WU Jianfei, LI Jiancheng, WANG Hongyi, et al. LDO regulator immunity modeling and simulation technology[J]. Journal of National University of Defense Technology,2013,35(5):168-173.