65 nm工艺双层三维静态存储器的软错误分析与评估
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国家自然科学基金资助项目(61373032,61303069);高等学校博士学科点专项科研基金资助项目(20124307110016)


Soft error analysis and evaluation of dual-layer 3D SRAM based on 65 nm technology
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    摘要:

    新兴的三维静态存储器将代替二维静态存储器被广泛用于高性能微处理器中,但它依然会受到软错误的危害。为了能够快速、自动分析多层管芯堆叠结构的三维静态存储器软错误特性,搭建了三维静态存储器软错误分析平台。利用该平台对以字线划分设计的三维静态存储器和同等规模的二维静态存储器分别进行软错误分析,并对分析结果进行对比。研究结果表明二维和三维静态存储器的翻转截面几乎相同,但三维静态存储器单个字中发生的软错误要比二维静态存储器更严重,导致难以使用纠检错技术对其进行加固。静态模式下二维和三维静态存储器敏感节点均分布于存储阵列中,表明静态模式下逻辑电路不会引发软错误。

    Abstract:

    The 3D SRAM (three-dimensional static random access memory) will take the place of 2D SRAM (two-dimensional static random access memory), and will be widely used in high performance microprocessor. However, 3D SRAM still suffers from the dangers of soft error. A novel 3D SRAM soft error analysis platform was designed for studying the soft error characteristic of 3D SRAM. The soft error characteristic of the designed 3D SRAM and the original 2D SRAM were analyzed by using our designed platform. It is found that 3D SRAM and 2D SRAM have the same upset cross section, but the soft error of 3D SRAM is more serious than that of 2D SRAM, which makes it difficult to harden 3D SRAM by using error correction codes technologies. At the static test mode, the upset sensitive nodes were only distributed in the memory array of both 3D SRAM and 2D SRAM. It indicates that the logic circuit can’t induce soft error at static test mode.

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李鹏,郭维,赵振宇,等.65 nm工艺双层三维静态存储器的软错误分析与评估. Soft error analysis and evaluation of dual-layer 3D SRAM based on 65 nm technology[J].国防科技大学学报,2016,38(5):20-25.

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  • 收稿日期:2015-11-11
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  • 在线发布日期: 2016-11-08
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