In order to evaluate the effectiveness of pulse laser experiment aiming at the single event effect of SoC(System on Chip), an experiment system was established based on a 65 nm SoC. The methods of coordinate setting, focusing on source and compensation about ΔZ on flip chip integrated circuit were proposed and employed. Pulsed laser tests were carried on static random access memory, register file, RapidIO and Dice flip-flop. The results indicate that SRAM is the most sensitive area and the results on these modules are consistent with the corresponding results under heavy-ion experiment. Therefore, the pulse laser is suitable for single-event effect researches on large-scale integrated circuit designed with nanometer technology. 