Design of radiation-tolerant controller chip in 130 nm hardened SOI process
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(1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2. University of Chinese Academy of Sciences, Beijing 100049, China)

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TN492

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    Abstract:

    Aimed at the anti-radiation requirements of the aerospace electronic system control module for integrated circuits, a controller chip based on the proportion, integral and differential algorithms was designed on a 130 nm partially depleted SOI (silicon-on-insulator) process platform. The TID (total ionizing dose) radiation reinforcement was investigated in terms of SOI wafer, fabrication process and layout design, respectively. The test results of the chip show that the adjustment accuracy of the chip reaches 5×10-12, which is equivalent to the imported radiation-tolerant FPGA (field programmable gate array); the chip is superior to the foreign anti-radiation FPGA in terms of long-term frequency stability. TID experiments were carried out and the results show that the chip can function normally under the total dose of 300 krad (Si).

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History
  • Received:November 28,2018
  • Revised:
  • Adopted:
  • Online: July 06,2020
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