面向空间应用的GaN功率器件及其辐射效应
2024,46(1):149-159
毕津顺
中国科学院大学 集成电路学院, 北京 100049;
中国科学院微电子研究所, 北京 100029，bijinshun@ime.ac.cn
沈立志
中国科学院大学 集成电路学院, 北京 100049;
中国科学院微电子研究所, 北京 100029
梅博
中国航天宇航元器件工程中心, 北京 100029
曹爽
中国航天宇航元器件工程中心, 北京 100029
孙毅
中国航天宇航元器件工程中心, 北京 100029
于庆奎
中国航天宇航元器件工程中心, 北京 100029
中国科学院大学 集成电路学院, 北京 100049;
中国科学院微电子研究所, 北京 100029，bijinshun@ime.ac.cn
沈立志
中国科学院大学 集成电路学院, 北京 100049;
中国科学院微电子研究所, 北京 100029
梅博
中国航天宇航元器件工程中心, 北京 100029
曹爽
中国航天宇航元器件工程中心, 北京 100029
孙毅
中国航天宇航元器件工程中心, 北京 100029
于庆奎
中国航天宇航元器件工程中心, 北京 100029
摘要：
研究氮化镓(GaN)功率器件及其辐射效应对于解决空间应用需求、促进新一代航天器建设具有重大意义。介绍了GaN功率器件的主要结构及工作原理,综述了近年来国内外在GaN功率器件的总剂量效应和单粒子效应两方面的研究进展,并对辐射效应在GaN功率器件中造成的退化和损伤机制进行分析与讨论。研究结果显示:GaN功率器件具有较强的抗总剂量能力,但是抗单粒子能力较弱,易发生漏电和单粒子烧毁,且烧毁点多发生在栅极边缘的漏侧。对GaN功率器件辐照损伤机理的研究缺乏权威理论,有待进一步探索,为其空间应用提供理论支撑。目前,平面结构的GaN功率器件是主流的技术方案,单片集成及高频小型化是GaN功率器件未来发展的方向。
研究氮化镓(GaN)功率器件及其辐射效应对于解决空间应用需求、促进新一代航天器建设具有重大意义。介绍了GaN功率器件的主要结构及工作原理,综述了近年来国内外在GaN功率器件的总剂量效应和单粒子效应两方面的研究进展,并对辐射效应在GaN功率器件中造成的退化和损伤机制进行分析与讨论。研究结果显示:GaN功率器件具有较强的抗总剂量能力,但是抗单粒子能力较弱,易发生漏电和单粒子烧毁,且烧毁点多发生在栅极边缘的漏侧。对GaN功率器件辐照损伤机理的研究缺乏权威理论,有待进一步探索,为其空间应用提供理论支撑。目前,平面结构的GaN功率器件是主流的技术方案,单片集成及高频小型化是GaN功率器件未来发展的方向。
基金项目：
国家自然科学基金资助项目
国家自然科学基金资助项目
GaN power devices and their radiation effects for space applications
BI Jinshun
School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, China;
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China,bijinshun@ime.ac.cn
SHEN Lizhi
School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, China;
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
MEI Bo
China Aerospace Components Engineering Center, Beijing 100029, China
CAO Shuang
China Aerospace Components Engineering Center, Beijing 100029, China
SUN Yi
China Aerospace Components Engineering Center, Beijing 100029, China
YU Qingkui
China Aerospace Components Engineering Center, Beijing 100029, China
School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, China;
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China,bijinshun@ime.ac.cn
SHEN Lizhi
School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, China;
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
MEI Bo
China Aerospace Components Engineering Center, Beijing 100029, China
CAO Shuang
China Aerospace Components Engineering Center, Beijing 100029, China
SUN Yi
China Aerospace Components Engineering Center, Beijing 100029, China
YU Qingkui
China Aerospace Components Engineering Center, Beijing 100029, China
Abstract：
It is of great significance to study GaN(gallium nitride) power devices and their radiation effects to meet the needs of space applications and promote the construction of a new generation spacecraft. Main structures and working principles of GaN power devices were introduced. Research progress of total ionizing dose effect and single event effect of GaN power devices in recent years was reviewed. Degradation and damage mechanisms of GaN devices caused by radiation effects were analyzed and discussed. Research results show that GaN power devices have strong resistance to total ionizing dose. However, GaN power devices are prone to leakage and single event burnout due to their weak resistance to single event burnout, and most of the burnout points occur at the drain side of the gate edge. Research on the radiation damage mechanism of GaN power devices lacks authoritative theories and needs to be further mastered to provide theoretical support for their space application. GaN power devices with planar structure are the current mainstream technical solutions. Monolithic integration, high frequency and miniaturization are the development directions of GaN power devices in the future.
It is of great significance to study GaN(gallium nitride) power devices and their radiation effects to meet the needs of space applications and promote the construction of a new generation spacecraft. Main structures and working principles of GaN power devices were introduced. Research progress of total ionizing dose effect and single event effect of GaN power devices in recent years was reviewed. Degradation and damage mechanisms of GaN devices caused by radiation effects were analyzed and discussed. Research results show that GaN power devices have strong resistance to total ionizing dose. However, GaN power devices are prone to leakage and single event burnout due to their weak resistance to single event burnout, and most of the burnout points occur at the drain side of the gate edge. Research on the radiation damage mechanism of GaN power devices lacks authoritative theories and needs to be further mastered to provide theoretical support for their space application. GaN power devices with planar structure are the current mainstream technical solutions. Monolithic integration, high frequency and miniaturization are the development directions of GaN power devices in the future.
收稿日期：
2022-04-26
2022-04-26
