体硅CMOS工艺下一种带隙基准的单粒子辐射特性分析
2024,46(4):169-174
文溢
国防科技大学 计算机学院, 湖南 长沙 410073，wenyi19920312@126.com
陈建军
国防科技大学 计算机学院, 湖南 长沙 410073
梁斌
国防科技大学 计算机学院, 湖南 长沙 410073
池雅庆
国防科技大学 计算机学院, 湖南 长沙 410073
邢海源
国防科技大学 计算机学院, 湖南 长沙 410073
姚啸虎
国防科技大学 计算机学院, 湖南 长沙 410073
国防科技大学 计算机学院, 湖南 长沙 410073，wenyi19920312@126.com
陈建军
国防科技大学 计算机学院, 湖南 长沙 410073
梁斌
国防科技大学 计算机学院, 湖南 长沙 410073
池雅庆
国防科技大学 计算机学院, 湖南 长沙 410073
邢海源
国防科技大学 计算机学院, 湖南 长沙 410073
姚啸虎
国防科技大学 计算机学院, 湖南 长沙 410073
摘要：
为了分析带隙基准(bandgap reference, BGR)在太空环境等极端条件下的单粒子辐射特性,分别在65 nm和28 nm体硅CMOS工艺下设计实现了一款BGR试验芯片,并采用脉冲激光单粒子模拟试验研究了其单粒子辐射特性。试验结果发现,当脉冲激光能量足够高时,BGR的输出电压显著增加,且退火后电压不能恢复,表明BGR发生了单粒子硬损伤(single-event hard damage, SHD),进一步的试验研究证明BGR中的三极管是诱发SHD的敏感器件。该研究为在体硅CMOS工艺下对BGR进行抗SHD加固设计提供了重要理论参考。
为了分析带隙基准(bandgap reference, BGR)在太空环境等极端条件下的单粒子辐射特性,分别在65 nm和28 nm体硅CMOS工艺下设计实现了一款BGR试验芯片,并采用脉冲激光单粒子模拟试验研究了其单粒子辐射特性。试验结果发现,当脉冲激光能量足够高时,BGR的输出电压显著增加,且退火后电压不能恢复,表明BGR发生了单粒子硬损伤(single-event hard damage, SHD),进一步的试验研究证明BGR中的三极管是诱发SHD的敏感器件。该研究为在体硅CMOS工艺下对BGR进行抗SHD加固设计提供了重要理论参考。
基金项目：
国家自然科学基金面上资助项目(61974163)
国家自然科学基金面上资助项目(61974163)
Analysis on single-event radiation characteristics for a bandgap reference in bulk CMOS technologies
WEN Yi
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China,wenyi19920312@126.com
陈建军
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
LIANG Bin
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
CHI Yaqing
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
XING Haiyuan
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
YAO Xiaohu
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China,wenyi19920312@126.com
陈建军
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
LIANG Bin
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
CHI Yaqing
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
XING Haiyuan
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
YAO Xiaohu
College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
Abstract：
In order to analyze the single-event radiation characteristics of BGR(bandgap reference) under extreme conditions such as space environments, a BGR test chip was designed and implemented in both 65 nm and 28 nm bulk CMOS technologies. Pulse laser single-event simulation experiments were conducted to study its single-event radiation characteristics. The experimental results show that when the pulsed laser energy is sufficiently high, the output voltage of BGR significantly increases after irradiation and the voltage cannot recover after annealing, this indicates that SHD(single-event hard damage) presents in the BGR. Further studies indicate that the bipolar junction transistor in BGR is the sensitive device to induce hard damage. The investigation provides important theoretical references for SHD hardening design of BGR in bulk CMOS technologies.
In order to analyze the single-event radiation characteristics of BGR(bandgap reference) under extreme conditions such as space environments, a BGR test chip was designed and implemented in both 65 nm and 28 nm bulk CMOS technologies. Pulse laser single-event simulation experiments were conducted to study its single-event radiation characteristics. The experimental results show that when the pulsed laser energy is sufficiently high, the output voltage of BGR significantly increases after irradiation and the voltage cannot recover after annealing, this indicates that SHD(single-event hard damage) presents in the BGR. Further studies indicate that the bipolar junction transistor in BGR is the sensitive device to induce hard damage. The investigation provides important theoretical references for SHD hardening design of BGR in bulk CMOS technologies.
收稿日期：
2022-04-02
2022-04-02
