厚度调控的二维α-In2Se3可调谐宽谱偏振光电探测器
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1.华南师范大学;2.浙江大学

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TN364+.3

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Two-dimensional α-In2Se3 based Photodetectors for Tunable and Broadband Polarization Response via Thickness Regulation
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    摘要:

    提出一种可以可控生长α-In2Se3的改良型物理气相沉积法,系统地研究了三种厚度α-In2Se3纳米片在可见光到近红外波段的宽谱响应性能。结果表明,α-In2Se3纳米片厚度可以显著调节光电性能,光响应度和比探测率随厚度增大而增大。此外,发现厚度32.8 nm的α-In2Se3纳米片在635 nm处的光电流各向异性比(二向色比)为4,具有良好的偏振敏感探测功能。综上所述,物理气相沉积法制备的二维α-In2Se3具有可见-红外宽谱响应和较好的偏振探测能力,是二维多功能光电器件的理想候选材料。

    Abstract:

    A modified physical vapor deposition method for the controllable growth of α-In2Se3 was proposed, and the broad-spectrum response performance of three thicknesses of α-In2Se3 nanosheets in the visible to near-infrared wavelength range was systematically studied. The results indicate that the thickness of α-In2Se3 nanosheets can significantly regulate the photoelectric performance, and the photoresponsivity and specific detection rate increase with increasing thickness. In addition, it was found that the α-In2Se3 with a thickness of 32.8 nm exhibited a photocurrent anisotropy ratio (dichroic ratio) of 4 at 635 nm, indicating good polarization-sensitive detection functionality. In summary, the two-dimensional α-In2Se3 prepared by the physical vapor deposition method demonstrates a wide visible-infrared spectral response and good polarization detection ability, making it an ideal candidate material for two-dimensional multifunctional optoelectronic devices.

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历史
  • 收稿日期:2025-01-06
  • 最后修改日期:2025-07-02
  • 录用日期:2025-04-28
  • 在线发布日期: 2025-07-08
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