引用本文: | 金昭廷,谢淑云,彭传才.反应离子镀锡-铟氧化物薄膜[J].国防科技大学学报,1982,(2):65-69.[点击复制] |
Jin Zhaoting,Xie Shuyun,Peng Chuancai.Reactive Ion-Plating Tin-Indium Oxide Thin Film[J].Journal of National University of Defense Technology,1982,(2):65-69[点击复制] |
|
|
|
本文已被:浏览 4555次 下载 5059次 |
反应离子镀锡-铟氧化物薄膜 |
金昭廷, 谢淑云, 彭传才 |
()
|
摘要: |
本文着重阐述了离子镀锡——铟氧化物的原理,主要技术条件及其相互关系,最佳技术条件的选择与控制。还介绍了离子镀锡一铟氧化物的实验结果。 |
关键词: |
DOI: |
投稿日期:1982-02-13 |
基金项目: |
|
Reactive Ion-Plating Tin-Indium Oxide Thin Film |
Jin Zhaoting, Xie Shuyun, Peng Chuancai |
Abstract: |
This paper emphatically relates the principle of ion-plating tin-indium Oxide thin film,the primal specifications and the relationship between them,as well as the selection and the control of the optimum specifications. And then experimental results of the reactive ion-plating tin-indium oxide are introduced. |
Keywords: |
|
|
|
|
|