| 引用本文: | 金昭廷,谢淑云,彭传才.反应离子镀锡-铟氧化物薄膜.[J].国防科技大学学报,1982,(2):65-69.[点击复制] |
| Jin Zhaoting,Xie Shuyun,Peng Chuancai.Reactive Ion-Plating Tin-Indium Oxide Thin Film[J].Journal of National University of Defense Technology,1982,(2):65-69[点击复制] |
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| 反应离子镀锡-铟氧化物薄膜 |
| 金昭廷, 谢淑云, 彭传才 |
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| 摘要: |
| 本文着重阐述了离子镀锡——铟氧化物的原理，主要技术条件及其相互关系，最佳技术条件的选择与控制。还介绍了离子镀锡一铟氧化物的实验结果。 |
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| 投稿日期：1982-02-13 |
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| Reactive Ion-Plating Tin-Indium Oxide Thin Film |
| Jin Zhaoting, Xie Shuyun, Peng Chuancai |
| Abstract: |
| This paper emphatically relates the principle of ion-plating tin-indium Oxide thin film，the primal specifications and the relationship between them，as well as the selection and the control of the optimum specifications. And then experimental results of the reactive ion-plating tin-indium oxide are introduced. |
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