| 引用本文: | 常春喜,王保恒.快擦写存储器结构及机理.[J].国防科技大学学报,1998,20(6):37-40.[点击复制] |
| Chang Chunxi,Wang Baoheng.Structures and Mechanisms of Flash Memory[J].Journal of National University of Defense Technology,1998,20(6):37-40[点击复制] |
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| 快擦写存储器结构及机理 |
| 常春喜, 王保恒 |
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(国防科技大学 计算机系 湖南 长沙 410073)
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| 摘要: |
| 讨论了快擦写存储器典型位元结构及其存储信息原理, 详细论述了目前广泛使用的或非和与非两种结构的快擦写存储矩阵的结构组成和工作原理。 |
| 关键词: 存储位元, 存储信息原理, 或非存储矩阵, 与非存储矩阵 |
| DOI： |
| 投稿日期：1998-03-04 |
| 基金项目: |
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| Structures and Mechanisms of Flash Memory |
| Chang Chunxi, Wang Baoheng |
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(Department of Computer, NUDT, Changsha, 410073)
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| Abstract: |
| The paper discusses the typical cell structure of flash memory and its principle of information storage. In addition, the organizations and working mechanisms of the NOR and NAND flash memory matrices, which are widely applied at present, are detailed. |
| Keywords: memory cell, information storage principle, NOR memory matrix, NAND meory matrix. |
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