| 引用本文: | 刘衡竹,刘凡宇,刘必慰,等.90纳米CMOS双阱工艺下STI深度对电荷共享的影响.[J].国防科技大学学报,2011,33(2):136-139.[点击复制] |
| LIU Hengzhu,LIU Fanyu,LIU Biwei,et al.Impact of STI Depth on Charge Sharing in 90nm CMOS Technology[J].Journal of National University of Defense Technology,2011,33(2):136-139[点击复制] |
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| 90纳米CMOS双阱工艺下STI深度对电荷共享的影响 |
| 刘衡竹, 刘凡宇, 刘必慰, 梁斌 |
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(国防科技大学 计算机学院，湖南 长沙 410073)
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| 摘要: |
| 基于3维TCAD器件模拟，研究了90nm CMOS双阱工艺下STI对电荷共享的影响。研究结果表明：增大STI深度能有效抑制NMOS电荷共享，且550nm为抑制电荷共享的有效深度, 超过这个深度收集的电荷量几乎保持不变；而对于PMOS，STI深度的增加使电荷共享线性减小。这对于电荷共享加固具有重要指导意义。 |
| 关键词: 电荷共享 单粒子效应 浅沟槽隔离(STI) 双极效应 |
| DOI： |
| 投稿日期：2010-05-13 |
| 基金项目:国家自然科学基金重点资助项目(60836004；61006070；61076025) |
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| Impact of STI Depth on Charge Sharing in 90nm CMOS Technology |
| LIU Hengzhu, LIU Fanyu, LIU Biwei, LIANG Bin |
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(College of Computer, National Univ. of Defense Technology, Changsha 410073, China)
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| Abstract: |
| The dependence of various STI depths on charge sharing in 90nm dual well CMOS technology was investigated. TCAD simulation results show that increasing STI can restrain charge sharing of NMOS effectively, and 550nm is the effective depth for the prevention of charge diffusion, beyond which the collected charge almost keeps constant; for PMOS, charge sharing decreases linearly with the increment of STI depth. This conclusion is useful for irradiation-hardness. |
| Keywords: charge sharing SEE(single event effect) STI(shallow trench isolation) bipolar amplification effect |
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