| 引用本文: | 马卓,段志奎,杨方杰,等.1.8V供电8.2ppm/℃的0.18μm CMOS带隙基准源.[J].国防科技大学学报,2011,33(3):89-94.[点击复制] |
| MA Zhuo,DUAN Zhikui,YANG Fangjie,et al.A 8.2ppm/℃ Bandgap Voltage Reference with 1.8V Power Supply in 0.18μm CMOS Process[J].Journal of National University of Defense Technology,2011,33(3):89-94[点击复制] |
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| 1.8V供电8.2ppm/℃的0.18μm CMOS带隙基准源 |
| 马卓, 段志奎, 杨方杰, 郭阳, 谢伦国 |
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(国防科技大学 计算机学院，湖南 长沙 410073)
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| 摘要: |
| 带隙基准电压源是各类模拟/数模混合集成电路中的基础性部件，其性能直接决定了整体电路的稳定性。CMOS工艺中的衬底三极管的放大倍数β较小，“发射极-基 极”通路对三极管的集电极电流的分流作用十分显著，导致带隙基准温度稳定性下降。此外，低电压条件下的电路缺乏足够的电压裕度，电源噪声的影响已经不可 忽略，基准源的抗电源噪声能力亟待加强。针对上述两个问题，分别提出了自适应的“发射极-基极”电流补偿技术和使用电容直接耦合电源噪声负反馈的方案。基于 0.18μm CMOS工艺的实现结果表明，在-55℃～150℃范围内，电源电压1.8V情况下，输出基准电压的温度系数可达8.2ppm/℃，且中/高频段的电源抑制比得到大幅度提高，直流段电源抑制比更可达-90dB。 |
| 关键词: 带隙基准电压源 集电极电流 温度稳定性 电源抑制比 低电源电压 |
| DOI： |
| 投稿日期：2010-11-12 |
| 基金项目:教育部新世纪优秀人才支持计划资助(NCET) |
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| A 8.2ppm/℃ Bandgap Voltage Reference with 1.8V Power Supply in 0.18μm CMOS Process |
| MA Zhuo, DUAN Zhikui, YANG Fangjie, GUO Yang, XIE Lunguo |
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(College of Computer, National Univ. of Defense Technology, Changsha 410073, China)
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| Abstract: |
| Bandgap reference is a fundamental component in modern analog/mixed signal integrated circuits. In CMOS process, because of the small β value, the base-emitter path of the bipolar junction transistor has a significant streaming effect on the collector current，which leads to a large drift on temperature for the bandgap reference. In this study, a current compensating technique is proposed to enhance the temperature stability of the bandgap reference, and the power supply rejection is improved with a noise feedback circuit. Experimental results in the 0.18μm CMOS process show that the temperature coefficient is 8.2ppm/℃ within the temperature range of -55℃～150℃ on the 1.8V power supply, and the power supply rejection is greatly improved, the DC power supply rejection ratio is -90dB. |
| Keywords: bandgap voltage reference collector current temperature stability power supply rejection ratio low voltage power supply |
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