| 引用本文: | 李达维,秦军瑞,陈书明.25nm鱼鳍型场效应晶体管中单粒子瞬态的工艺参数相关性.[J].国防科技大学学报,2012,34(5):127-131.[点击复制] |
| LI Dawei,QIN Junrui,CHEN Shuming.The dependence of process parameters on single event transient in 25 nm FinFET[J].Journal of National University of Defense Technology,2012,34(5):127-131[点击复制] |
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| 25nm鱼鳍型场效应晶体管中单粒子瞬态的工艺参数相关性 |
| 李达维, 秦军瑞, 陈书明 |
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(国防科技大学 计算机学院，湖南 长沙 410073)
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| 摘要: |
| 基于TCAD （Technology Computer Aided Design）3-D模拟，研究了25 nm鱼鳍型场效应晶体管（Fin Field Effect Transistor，FinFET）中单粒子瞬态效应的工艺参数相关性。研究表明一些重要工艺参数的起伏会对电荷收集产生显著影响，从而影响到电路中传播的SET（Single Event Transient）脉冲宽度。对于最佳工艺拐角，离子轰击后收集的电荷量可以降低约38%，而在最坏工艺拐角下，收集的电荷量则会增加79%。这些结论对FinFET工艺下的SET减缓及抗辐射加固设计提供了一种新的思路。 |
| 关键词: 鱼鳍型场效应晶体管 单粒子效应 工艺参数相关性 电荷收集 |
| DOI： |
| 投稿日期：2012-04-11 |
| 基金项目:国家自然科学基金资助项目(61076025,60906014) |
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| The dependence of process parameters on single event transient in 25 nm FinFET |
| LI Dawei, QIN Junrui, CHEN Shuming |
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(College of Computer, National University of Defense Technology, Changsha 410073, China)
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| Abstract: |
| With the help of Technology Computer-Aided Design (TCAD) 3-D simulation, the dependence of process parameters on single event transient (SET) in 25 nm raised source-drain FinFET (Fin Field Effect transistor) was studied. It is found that the fluctuation of some process parameters exert remarkable impact on the charge collection, thus affecting the SET pulse width propagated in circuits. For the best corner process parameters, the amount of charge collected can be reduced by 38%, whereas the charges will increase 79% for the worst corner process, which foumulates a new idea for the SET mitigation and radiation-harden design in FinFET. |
| Keywords: FinFET (Fin Field Effect Transistor) SEE (Single Event Effect) process parameter charge collection |
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