| 引用本文: | 吴建飞 ,李建成 ,王宏义 ,等.LDO稳压器敏感度建模与仿真技术.[J].国防科技大学学报,2013,35(5):168-173.[点击复制] |
| WU Jianfei,LI Jiancheng,WANG Hongyi,et al.LDO regulator immunity modeling and simulation technology[J].Journal of National University of Defense Technology,2013,35(5):168-173[点击复制] |
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| LDO稳压器敏感度建模与仿真技术 |
| 吴建飞 1, 李建成 1, 王宏义 1, 亚历山大·博耶2, 沈荣骏 1 |
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(1.国防科技大学 电子科学与工程学院， 湖南 长沙 410073;2.法国国家科学研究中心，图卢兹 31077)
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| 摘要: |
| 基于LDO稳压器在电磁干扰（EMI）下产生直流偏移失效的机理分析，展开敏感度建模与仿真方法研究。使用一款实验芯片，创新地引入片上电压传感器，用于测试EMI在LDO稳压器内部的传播特性。在敏感度建模中，建立等效电路模型，通过直流功能测试，Z参数阻抗特性测试验证模型的正确性，将该模型用于LDO稳压器的敏感度预测。在敏感度仿真过程中，通过分析关键子电路和不断增加寄生元件，仿真不同寄生因素对敏感度影响的权重。将仿真结果与传导直接注入法（DPI）片上测试结果对比，仿真结果与DPI测试在频域1MHz至1GHz匹配。 |
| 关键词: LDO稳压器 电磁干扰（EMI） 敏感度 片上电压传感器 寄生元件 直接注入法（DPI) |
| DOI： |
| 投稿日期：2013-03-09 |
| 基金项目:国家自然科学基金资助项目（61176093）；国家留学基金委联合培养基金资助项目 |
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| LDO regulator immunity modeling and simulation technology |
| WU Jianfei1, LI Jiancheng1, WANG Hongyi1, Alexander Boyer2, SHEN Rongjun1 |
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(1.College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China;2.Centre National de la Recherche Scientifique, Toulouse 31077, France)
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| Abstract: |
| Based on the LDO regulator DC offset failure mechanism under electromagnetic interference (EMI) study, the immunity modeling and simulation methods are proposed. A test chip was designed with novel on-chip voltage sensor which is implemented to test the EMI propagation inner LDO regulator. In the immunity modeling process, an equivalent circuit model dedicated to susceptibility prediction was built and validated by DC functional and Z parameter impedance measurements. In the simulation flow, the key sub-circuits and parasitic elements were analyzed to reveal the weight contributions on immunity issues in frequency domain. The DPI measurement results show a good fit with prediction from the model up to 1 GHz. |
| Keywords: LDO regulator electromagnetic interference (EMI) immunity on chip voltage sensor parasitic elements direct power injection (DPI) |
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