| 引用本文: | 张存波,张建德,王弘刚,等.微波脉冲对硅基双极型晶体管的损伤特性.[J].国防科技大学学报,2015,37(2):1-4.[点击复制] |
| ZHANG Cunbo,ZHANG Jiande,WANG Honggang,et al.Damage characteristic of microwave pulse injected on Si bipolar transistor[J].Journal of National University of Defense Technology,2015,37(2):1-4[点击复制] |
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| 微波脉冲对硅基双极型晶体管的损伤特性 |
| 张存波, 张建德, 王弘刚, 杜广星 |
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(国防科技大学 光电科学与工程学院， 湖南 长沙 410073)
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| 摘要: |
| 利用微波脉冲注入实验平台，对硅基双极型晶体管低噪声放大器进行了损伤效应实验。在微波脉冲对硅基双极型晶体管低噪声放大器损伤的失效分析中，当低噪声放大器增益下降大于10dB时，发现硅基双极型晶体管出现了永久损伤。通过对比测量硅基双极型晶体管损伤前后的电特性以及利用扫描电子显微镜观测损伤后晶体管的微观特性发现：硅基双极型晶体管被微波脉冲损伤后，基区的硅材料烧蚀导致发射结和集电结短路，不再具有PN结特性，导致器件失效。 |
| 关键词: 硅基双极型晶体管 微波脉冲 击穿 失效分析 |
| DOI：10.11887/j.cn.201502001 |
| 投稿日期：2014-12-15 |
| 基金项目:国家自然科学基金资助项目（51377164） |
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| Damage characteristic of microwave pulse injected on Si bipolar transistor |
| ZHANG Cunbo, ZHANG Jiande, WANG Honggang, DU Guangxing |
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(College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, China)
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| Abstract: |
| The experiment of damage effect on Si bipolar transistor-low noise amplifier injected the microwave pulse in experimental platform. In the failure analysis of Si bipolar transistor-low noise amplifier with microwave pulse, the transistor was permanently damaged when the gain of low noise amplifier decreased more than 10 dB. The electrical characteristic of the Si bipolar transistor was measured before and after its damage and the micro-characteristic of the damaged transistor was observed by scanning electron microscope. Results show that when the Si bipolar transistor is damaged with microwave pulse, the ablative Si material in the base region causes short circuit of emitter junction and collector junction, which have the consequences of losing the PN junction characteristics and leading to failure devices. |
| Keywords: Si bipolar transistor microwave pulse breakdown failure analysis |
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