引用本文: | 赵振宇,邓全,李鹏,等.3D SRAM中TSV开路测试算法研究与实现[J].国防科技大学学报,2016,38(5):7-13.[点击复制] |
ZHAO Zhenyu,DENG Quan,LI Peng,et al.Research and implementation of TSV open test algorithm in 3D SRAM[J].Journal of National University of Defense Technology,2016,38(5):7-13[点击复制] |
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3D SRAM中TSV开路测试算法研究与实现 |
赵振宇, 邓全, 李鹏, 蒋剑锋, 曲连华, 唐皓月 |
(国防科技大学 计算机学院, 湖南 长沙 410073)
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摘要: |
基于三维集成电路技术实现的三维静态随机存储器,其电路中使用了大量的过硅通孔。目前过硅通孔制造工艺尚未成熟,使得过硅通孔容易出现开路或短路故障,从而给三维静态随机存储器的测试带来新的挑战。现有的过硅通孔专用测试方式虽然能够探测出过硅通孔的故障,但需要特定的测试电路来实现,这就增加了额外的面积开销,同时加大了电路设计的复杂度。因此,提出一种使用测试算法来探测过硅通孔开路故障的方法。在不增加额外面积开销的情况下,通过内建自测试电路解决三维静态随机存储器中过硅通孔的开路故障检测问题。结果显示,该过硅通孔测试算法功能正确,能够准确探测到过硅通孔的开路故障,并快速定位过硅通孔的开路位置。 |
关键词: 三维集成电路 过硅通孔 开路故障 测试 算法 |
DOI:10.11887/j.cn.201605002 |
投稿日期:2015-05-30 |
基金项目:国家自然科学基金资助项目(61176030,61272139) |
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Research and implementation of TSV open test algorithm in 3D SRAM |
ZHAO Zhenyu, DENG Quan, LI Peng, JIANG Jianfeng, QU Lianhua, TANG Haoyue |
(College of Computer, National University of Defense Technology, Changsha 410073, China)
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Abstract: |
In 3D-IC (three dimensional-integrated circuit) technology based 3D SRAM(three-dimensional static random access memory), a large number of TSVs (through silicon vias) have been implemented in circuits. The manufacturing process of TSV is not mature,which makes TSVs more prone to open defects and brings new challenges to the 3D SRAM test. The existing method of TSV test can find out where the faults are, but it needs extra specific circuit to implement, which increases both the area overhead and its design complexity. In consideration of what was discussed above, a new idea to detect the open defects of TSV based on a test algorithm was proposed. It proved to be an effective method to detect the open defects of TSV in 3D SRAM using BIST(built-in self test) without any extra overhead. Results show that the proposed method has no functional problem with the algorithm and it can realize the purpose of TSV open fault detection. |
Keywords: three dimensional-integrated circuit through silicon via open defects test algorithm |
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