| 引用本文: | 孙杰杰,王超,李嘉威,等.抗辐照MRAM研究进展.[J].国防科技大学学报,2023,45(6):174-195.[点击复制] |
| SUN Jiejie,WANG Chao,LI Jiawei,et al.Research progress of anti-irradiation MRAM[J].Journal of National University of Defense Technology,2023,45(6):174-195[点击复制] |
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| 抗辐照MRAM研究进展 |
| 孙杰杰，王超，李嘉威，姜传鹏，曹凯华，施辉，张有光，赵巍胜 |
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(1.北京航空航天大学 集成电路科学与工程学院, 北京 100191;2.中国电子科技集团公司第五十八研究所, 江苏 无锡 214072;3.北京航空航天大学 电子信息工程学院, 北京 100191)
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| 摘要: |
| 新型非易失磁性随机存储器（magnetic random access memory，MRAM）具有读写速度快、数据保持时间长、功耗低等优点，引起了研究人员的广泛关注。其优异的抗辐照能力被人们深入挖掘，有望进一步应用于航天等领域。本文回顾了MRAM的产业化发展历程、技术变革及应用情况，列举了近年成熟的MRAM产品，对不同的代际MRAM的优缺点进行了剖析；对MRAM核心存储单元——磁隧道结（magnetic tunnel junction，MTJ）和外围基于互补金属氧化物半导体(complementary metal oxide semiconductor, CMOS)的读写电路的辐射效应分别进行了探讨；总结了近年来MRAM抗辐照加固设计方面的最新成果；对抗辐照MRAM在航空航天领域甚至核能领域的发展前景进行了展望。 |
| 关键词: 磁性随机存储器 磁隧道结 辐照 电离总剂量 单粒子效应 |
| DOI：10.11887/j.cn.202306020 |
| 投稿日期：2022-03-14 |
| 基金项目:国家自然科学基金资助项目（62001014，92164206） |
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| Research progress of anti-irradiation MRAM |
| SUN Jiejie1,2,3, WANG Chao2, LI Jiawei2, JIANG Chuanpeng1, CAO Kaihua1, SHI Hui2, ZHANG Youguang3, ZHAO Weisheng1 |
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(1.School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191 , China;2.China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214072 , China;3.School of Electronic and Information Engineering, Beihang University, Beijing 100191 , China)
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| Abstract: |
| The novel non-volatile MRAM(magnetic random access memory) has the advantages of fast read and write speed, long data retention time and low power consumption, which attracts wide attention from researchers. Its excellent anti-irradiation capabilities are explored in depth, and further applications in aerospace and other fields are expected. The industrial development, technological changes and applications of MRAM were reviewed, the mature MRAM products of recent years were listed, and the advantages and disadvantages of different generations of MRAM were analyzed. The radiation effects of MTJ(magnetic tunnel junction) and read/write circuit based CMOS(complementary metal oxide semiconductor) were discussed. The recent achievements in anti-radiative hardening design for MRAM were summarized. The development prospect of anti-irradiation MRAM in aerospace field and even nuclear energy field was prospected. |
| Keywords: magnetic random access memory magnetic tunnel junction irradiation total ionizing dose single event effect |
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