RRAM (resistive random-access memory) has emerged as a promising non-volatile memory technology due to its simple device structure, low power consumption, fast switching speed, and excellent scalability, addressing the data movement bottleneck in traditional compute-memory separation architectures. However, challenges in switching uniformity, cycling endurance, and integration reliability hinder its widespread adoption. This review systematically examined recent advances in RRAM, covering mechanism analysis, performance modulation, process integration technologies, and innovative applications. Starting from resistive switching mechanisms, key approaches based on process optimization and electrical programming strategies were summarized to enhance device uniformity and reliability. At the integration level, recent advances in CMOS（complementary metal-oxide-semiconductor） compatibility at advanced technology nodes and high-density 3D(three-dimensional) integration of RRAM were systematically reviewed. In terms of applications, the development trends of RRAM in high-energy-efficiency in-memory computing, neuromorphic computing, intelligent sensing, and secure chips were analyzed in detail. Towards the future, synergetic cross-scale innovation spanning mechanism, material, and architectural levels were emphasized, supporting the strategic goals of the integrated development of intelligent computing and information technologies.