Calculation of Cosmic High Energy Proton Induced Single Event Upset Rate
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Abstract:
By simplifying the sensible volume of semiconductor devices, the energy deposited by the cosmic high-energy protons in the sensible volume of semiconductor devices is calculated. Then by using the Weibull function derived by the ground heavy ion SEU experiments, the SEU rates of several devices by the shielding of 33 mm Aluminum in the CRRRES satellite orbit are calculated. The results are compared and analyzed.
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WANG Tongquan, DAI Hongyi, SHEN Yongping, ZHANG Ruoqi, XIAO Yabin. Calculation of Cosmic High Energy Proton Induced Single Event Upset Rate[J]. Journal of National University of Defense Technology,2002,24(2):11-13.